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PSD(2)

Create an illustration showing various power electronic devices like IGBT, DMOSFET, and GTO in a circuit diagram, emphasizing their performance characteristics and relationships in a technical style.

Power Electronics Quiz

Test your knowledge of power electronics with this intriguing quiz focused on IGBTs, DMOSFETs, and other crucial components. Dive deep into the characteristics and behaviors of different power devices.

Prepare for questions about:

Device characteristics
Switching times and resistivity
Breakdown mechanisms

5 Questions1 MinutesCreated by ActiveCircuit41

The IGBT is :

Has two types of on-state

Has single type of blocking type

The star-device of power electronics

An unipolar device

A power BJT triggered by the channel of a power MOSFET

The ON-OFF switching time of a PiN power diode ???

Increases, as the thickness of the drift layer is decreases

Decreases, as the thickness of the drift layer increases

Decreases, as the thickness of the drift layer is decreases

Decreases, as the carrier lifetime, in the drift region, increases

Is the period of time required to stop the flow of the current through the diodet

When comparing power DMOSFET - COOLMOS - IGBT - GTO, considering drift regions with the same geometry and doping level:

The BV of the power DMOSFET is higher than the BV of the IGBT

The GTO has the highest BV

The BV of the COOLMOS is larger than the BV of the IGBT

The BV of the COOLMOS is smaller than the BV of the IGBT

The IGBT has the highest BV

Which of the following statements is true regard to the drift layer?

It is characteristic for every power device and it is always the thinner layer

At breakdown, it has no carriers in the case of non-punch-through structures

At breakdown, it has no carriers in the case of punch-through structures

It is characteristic for every power device and it is always medium or lowly doped

It is characteristic for every power device and it is always n-type

What happens with the resistivity and carrier mobility in a semiconducting material as the material doping gets higher and higher ?

The resistivity decreases, the mobility increases

Both the resistivity and the mobility decrease

The resistivity decreases, the mobility remains constant

The resistivity increases, the mobility decreases

Both resistivity and mobility increase

{"name":"PSD(2)", "url":"https://www.quiz-maker.com/QPREVIEW","txt":"Test your knowledge of power electronics with this intriguing quiz focused on IGBTs, DMOSFETs, and other crucial components. Dive deep into the characteristics and behaviors of different power devices.Prepare for questions about:Device characteristicsSwitching times and resistivityBreakdown mechanisms","img":"https:/images/course6.png"}